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—Electrical charge-trapping characteristics have been studied in thermal oxides that were implanted with Si, experimentally using electron spin resonance (ESR), capacitance versus voltage (CV) measurements, transmission electron microscopy (TEM), atomic force microscopy (AFM), and theoretically with Density Functional Theory (DFT) using plane waves. Our(More)
Silicon VDMOS power MOSFET technology is being supplanted by UMOS (or trench) power MOSFET technology. Designers of spaceborne power electronics systems incorporating this newer power MOSFET technology need to be aware of several unique threats that this technology may encounter in space. Space radiation threats to UMOS power devices include vulnerabilities(More)
Power electronic devices are susceptible to catastrophic failures when they are exposed to energetic particles; the most serious failure mechanism is single event burnout (SEB). SEB is a widely recognized problem for space applications , but it also may affect devices in terrestrial applications. This phenomenon has been studied in detail for power MOSFETs,(More)
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