Kenneth F. Galloway

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Electrical charge-trapping characteristics have been studied in thermal oxides that were implanted with Si, experimentally using electron spin resonance (ESR), capacitance versus voltage (CV) measurements, transmission electron microscopy (TEM), atomic force microscopy (AFM), and theoretically with Density Functional Theory (DFT) using plane waves. Our(More)
Power electronic devices are susceptible to catastrophic failures when they are exposed to energetic particles; the most serious failure mechanism is single event burnout (SEB). SEB is a widely recognized problem for space applications, but it also may affect devices in terrestrial applications. This phenomenon has been studied in detail for power MOSFETs,(More)
Silicon VDMOS power MOSFET technology is being supplanted by UMOS (or trench) power MOSFET technology. Designers of spaceborne power electronics systems incorporating this newer power MOSFET technology need to be aware of several unique threats that this technology may encounter in space. Space radiation threats to UMOS power devices include vulnerabilities(More)
We present a TCAD-based approach for characterizing hot-carrier degradation in p-channel MOSFETs that includes models for hot-electron injection, carrier transport, and electron trapping in the oxide. The energy-balance equations have been solved in the silicon substrate to accurately model the carrier-heating and injection processes. This approach clearly(More)
The physical models for the SEB and SEGR failure mechanisms of vertical power MOSFETS are reviewed, the vulnerability of new and advanced power MOSFET designs to these space-based failure mechanisms are discussed, and concerns about testing methodology for these catastrophic single-event effects are identified.
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