Impacts of the 4H-SiC/SiO<inf>2</inf> interface states on the switching operation of power MOSFETsAtsushi Sakai, Katsumi Eikyu, +5 authors Yasuo Yamaguchi2015 International Conference on Simulation of…2015Impacts of the 4H-SiC/SiO<sub>2</sub> interface states on the switching operation of power MOSFETs are evaluated. The energy distributions of the interface states are characterized using measured C-V… (More)
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