Ken Shono

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In this paper, we describe 600 V GaN high electron mobility transistors (HEMTs) technologies on a 6-inch Si substrate using an Au-free Si-LSI mass production line. Metal insulator semiconductor (MIS) HEMTs were fabricated using AlN as a gate insulator. The AlN layer was deposited by thermal atomic layer deposition (ALD) method using the mass-production-type(More)
Manufacturing readiness of the world's first highly reliable 650V GaN HEMT is demonstrated with high process capability (CpK>1.6) for leakage and on resistance. This technology was developed in a Si-CMOS compatible 6-inch foundry and has been demonstrated with over one thousand wafers worth of data spread over two generations of technology nodes covering(More)
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