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— Solar cells based on a heterojunction between crystalline silicon and the organic polymer PEDOT:PSS were fabricated at temperatures < 100ºC by spin-coating. The Si/PEDOT interface blocks electrons in n-type silicon from moving to an anode and functions as a low-temperature alternative to diffused p-n junctions. Reverse recovery measurements were used to… (More)
The classical SiO2/Si interface, which is the basis of integrated circuit technology, is prepared by thermal oxidation followed by high temperature (>800 °C) annealing. Here we show that an interface synthesized between titanium dioxide (TiO2) and hydrogen-terminated silicon (H:Si) is a highly efficient solar cell heterojunction that can be prepared under… (More)
—Solar cells based on a heterojunction between crystalline silicon and the organic polymer PEDOT:PSS were fabricated at temperatures <100 • C by spin coating. The Si/PEDOT interface blocks electrons in n-type silicon from moving to the an-ode and functions as a low-temperature alternative to diffused p-n junctions. The device takes advantage of the light… (More)
Articles you may be interested in High efficiency sequentially vapor grown n-i-p CH3NH3PbI3 perovskite solar cells with undoped P3HT as p-type heterojunction layer Carrier recombination losses in inverted polymer: Fullerene solar cells with ZnO hole-blocking layer from transient photovoltage and impedance spectroscopy techniques High efficiency double… (More)
In this Research Article, we demonstrate pulsed laser processing of a silver nanowire network transparent conductor on top of an otherwise complete solar cell. The macroscopic pulsed laser irradiation serves to sinter nanowire-nanowire junctions on the nanoscale, leading to a much more conductive electrode. We fabricate hybrid silicon/organic heterojunction… (More)
— We demonstrate a hole-blocking crystalline-silicon/titanium-oxide heterojunction that can be fabricated by a modified MOCVD process at only 100 ºC substrate temperature. interface was characterized in terms of interface recombination velocity. We show that annealed Si/TiO 2 interfaces can achieve recombination velocities of ~ 200 cm/s.