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Journals and Conferences
A drastic reduction of the growth temperature of oxynitride (SiON) films, which are usually grown around 1000/spl deg/C, is realized by using a microwave-excited high-density Kr-O/sub 2/-NH/sub 3/ plasma system, which enables their growth at 400/spl deg/C. It is shown that the addition of only a minute amount of nitrogen (0.5% NH/sub 3/ partial pressure)… (More)
It is demonstrated that thin oxynitride (SiON) films can be grown on single crystal (100) silicon substrates at a growth temperature of 400 degC, yielding high-quality electrical insulating and reliability properties which are compatible with the IC industry requirements. This is a drastic reduction in the growth temperature with respect to thermally grown… (More)
Lasing with a low threshold current of 5.4 mA and a high output power of 110 mW was achieved using a novel closely-stacked quantum dots having high uniformity and high emission efficiency.