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ZnSe-based heterostructures grown on GaAs substrates have been investigated for use in pindiode LED applications. ZnSe has a large band gap, 2.76 eV, as well as a near lattice match to GaAs, 5.6688 Å vs. 5.6538 Å, respectively. In this study a metallorganic vapor phase epitaxy (MOVPE) deposition technique is used to produce doped and undoped thin films of(More)
There are many reports of ZnSe nanowire synthesis, but photoluminescence measurements on these nanowires indicate weak band-edge and high sub-bandgap defect emission. The two main contributors to the non-optimal photoluminescence are nanowire growth at high temperatures and unpassivated surface states. In this paper, the synthesis of II-VI core-shell(More)
In this Letter, we reported the unusual non-blinking characteristics of the fluorescence from individual CdZnSe/ZnSe alloyed quantum dots. However, it has recently come to our attention that similar fluorescence behaviour was seen by Celso de Mello Donega, Daniel Vanmaekelbergh and co-workers from a single fluorophore on bare silica glass. In particular,(More)
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