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Extremely low surface recombination velocity (SRV) of crystalline silicon (c-Si), as low as 1.3 cm/s or even lower, is achieved with silicon nitride (SiNx) and amorphous silicon (a-Si) stacked(More)
We directly observed reductions in the effective minority-carrier lifetime (τeff) of n-type crystalline silicon (c-Si) substrates with silicon-nitride passivation films caused by potential-induced(More)