Keh-Chung Wang

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We have successfully developed a 128Gb MLC (or 192Gb TLC) 3D NAND Flash using 16-layer SGVC architecture. The produced memory density is 1.6 Gb/mm2 for MLC or 2.4 Gb/mm2 for TLC (including CMOS(More)
3D NAND is usually designed with the charge-trapping (CT) device, arranged in a “junction-free” structure where the transistors are serially connected without a N+ diffusion junction in between them.(More)
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