Kazuyoshi Torii

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We have realized a 0.9nm-EOT TaSix/HfSiON gate stack that exhibits the high electron mobility of 264 cm 2 /Vs @ 0.8MV/cm (86% of thermal SiO 2), even after spike annealing at 1000ºC. This was achieved by using thermally-stable HfSiON gate dielectrics with plasma nitridation, in which interfacial layer growth due to recoiled oxygen had been successfully(More)
INTRODUCTION THE semiconductor industry that has witnessed such remarkably sustained and rapid growth for more than 40 years is now in the early years of the 21st century beginning to undergo a fundamental change in the way further performance gains will be achieved. To shed light on this development, this paper reviews the current state of research and(More)
1. Introduction HfSiON is considered the most promising candidate of gate dielectrics for hp65 node LSTP devices due to its high mobility [1-2]. Sub-1nm EOT high-k gate dielectrics are required for LOP devices in hp45 node and beyond [3]. However, the k-value of HfSiON is 16 at most. In order to obtain sub-1nm EOT, the physical thickness of HfSiON must be(More)
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