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AlGaN/GaN high electron mobility transistors (HEMTs) were developed for X-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 11.52 mm gate periphery exhibits output power of over 81.3W with a power added(More)
AlGaN/GaN high electron mobility transistors (HEMTs) were developed for Ku-band applications. The operating voltage characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 12 mm gate periphery exhibits output power of over 30 W with a power added efficiency (PAE) of 12% under VDS = 30 V, CW(More)
We examined the existing practices of various media to ascertain the usability of information based on life cycle thinking (LCT) which can be key to changing consciousness and behavior of consumers towards pursuing a sustainable society. Such information has been provided to consumers in various forms in various places at various times. Nevertheless, a(More)
This paper reports 13.56 MHz and 27.1 MHz class-E amplifiers with a high voltage GaN-HEMT as the main switching device showing the possibility of GaN-HEMTs in high frequency switching power applications such as RF power-supply applications. The 380 V/1.9 A GaN power-HEMT was designed and fabricated for high-voltage power electronics applications. The(More)
An i-AlGaN/GaN HFET structure with two different depth-recesses formed in the i-AlGaN layer is proposed for application to a 1.9 GHz SPDT switch. In the HFET structure, an ohmic contact is formed in the deep recess to reduce the contact resistance, and a Schottky gate is formed in the shallow recess to decrease the leakage current. The off-state capacitance(More)
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