Kazutoshi Kobayashi

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— In this paper, we propose a yield and speed enhancement scheme using a reconfigurable device. An LUT array LSI is fabricated on a 90nm process to measure process variations of LUTs. D2D and WID variations are clearly observed. Reconfiguration using the measurement process variations boosts yield and also increases the average operating speed by 4.1%. In(More)
It is possible to enhance speed and yield of reconfigurable devices utilizing WID variations. An LUT array LSI is fabricated on a 90nm process to measure WID and D2D variations. Performance fluctuations are measured by counting the number of LUTs through which a signal is passing within a certain time. D2D and WID variations are clearly observed by the(More)
A 32-bit CPU which operates with the lowest energy of 13.4 pJ/cycle at 0.35V and 14MHz, operates at 0.22V to 1.2V and with 0.14µA sleep current is demonstrated. The low power performance is attained by Reverse-Body-Bias-Assisted 65nm SOTB CMOS (Silicon On Thin Buried oxide) technology. The CPU can operate more than 100 years with 610mAH Li battery. Extended(More)
We propose a memory-based parallel processor for vector quantization called a functional memory type parallel processor for vector quantization (FMPP-VQ). It accelerates nearest neighbor search of vector quantization. All distances between an input vector and reference vectors in a codebook are computed simultaneously in all PEs. The minimum value of all(More)
SUMMARY We measure neutron-induced Single Event Upsets (SEUs) and Multiple Cell Upsets (MCUs) on Flip-Flops (FFs) in a 65-nm bulk CMOS process in order to evaluate dependence of MCUs on cell distance and well-contact density using four different shift registers. Measurement results by accelerated tests show that MCU/SEU is up to 23.4% and it is(More)
—The leading edge products have a feature size of 22 nm in 2014. Designing reliable systems has become a big challenge in recent years. Transistor reliability has a great impact on highly-reliable CMOS circuit operations. Random telegraph noise is one of major recent transistor reliability concerns. First, recent researches on RTN and its impact on circuits(More)