Kazutoshi Kobayashi

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In this paper, we propose a yield and speed enhancement scheme using a reconfigurable device. An LUT array LSI is fabricated on a 90nm process to measure process variations of LUTs. D2D and WID variations are clearly observed. Reconfiguration using the measurement process variations boosts yield and also increases the average operating speed by 4.1%. In(More)
A 32-bit CPU which operates with the lowest energy of 13.4 pJ/cycle at 0.35V and 14MHz, operates at 0.22V to 1.2V and with 0.14µA sleep current is demonstrated. The low power performance is attained by Reverse-Body-Bias-Assisted 65nm SOTB CMOS (Silicon On Thin Buried oxide) technology. The CPU can operate more than 100 years with 610mAH Li battery. Extended(More)
It is possible to enhance speed and yield of reconfigurable devices utilizing WID variations. An LUT array LSI is fabricated on a 90nm process to measure WID and D2D variations. Performance fluctuations are measured by counting the number of LUTs through which a signal is passing within a certain time. D2D and WID variations are clearly observed by the(More)
—This paper presents a mixed-grained reconfigurable VLSI array architecture that can cover mission-critical applications to consumer products through C-to-array application mapping. A proof-of-concept VLSI chip was fabricated in 65nm process. Measurement results show that applications on the chip can be working in a harsh radiation environment. Irradiation(More)
—Technology scaling increases the role of charge sharing and bipolar effect with respect to multiple cell upset. We analyze the contributions of cell distance and well-contact density to suppress MCU by device-level simulations and neutron experiments. Device simulation results reveal that the ratio of MCU to SEU exponentially decreases by increasing the(More)
SUMMARY We measure neutron-induced Single Event Upsets (SEUs) and Multiple Cell Upsets (MCUs) on Flip-Flops (FFs) in a 65-nm bulk CMOS process in order to evaluate dependence of MCUs on cell distance and well-contact density using four different shift registers. Measurement results by accelerated tests show that MCU/SEU is up to 23.4% and it is(More)