Kazushi Hayashi

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T. Hisaka3
Tamio Mano2
Toshio Kamiya2
Hideo Hosono2
Masahiro Hirano2
3T. Hisaka
2Tamio Mano
2Fumihiro Maruyama
2Takao Uehara
2Nobuaki Kawato

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Publication Year

1984
2014

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Co-author

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Electrical Reliability of RF Power GaAs PHEMTs
GaAs PHEMTs are broadly used in RF power applications for wireless systems. A major concern with these devices is their gradual degradation as a result of prolonged biasing at high voltages. Previous research has identified the drain side of the device as the region that sustains most of the damage [1], but other mechanisms involving charge modulation under… (More)
Degradation mechanism of PHEMT under large signal operation
We have studied the degradation mechanism of AlGaAs/InGaAs pseudomorphic HEMTs (PHEMTs) under large signal operation. The output power of the PHEMT is degraded with increasing drain voltage (Vd), temperature, and humidity. The deteriorated devices show a decrease of the maximum drain current (Imax) around the knee voltage (Vk) and an increase of the drain… (More)
Impact of Drain Recess Length on the RF Power Performance of GaAs PHEMTs
RF power AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) are widely used in satellite communication systems, transmit/receive modules for military radar applications, and cellular telephones. A high breakdown voltage (BV DG) is a necessary requirement for a device to achieve high P OUT. Increasing the gate-to-drain recess length (L… (More)
In-line Process Monitoring for Amorphous Oxide Semiconductor TFT Fabrication using Microwave-detected Photoconductivity Decay Technique
SUMMARY We have investigated the microwave-detected photocon-ductivity responses from the amorphous In–Ga–Zn–O (a-IGZO) thin films. The time constant extracted by the slope of the slow part of the reflectivity signals are correlated with TFT performances. We have evaluated the influences of the sputtering conditions on the quality of a-IGZO thin film, as… (More)
Application of Microwave Photoconductivity Decay Method to Characterization of Amorphous In-Ga-Zn-O Films
SUMMARY Microwave photoconductivity decay (μ-PCD) method was applied to evaluate the effects of chemical composition and Ar + plasma induced damage on the bulk and the surface states in amorphous In-Ga-Zn-O (a-IGZO) films. It was found that the peak reflectivity signal in the pho-toconductivity response increased with decreasing the Ga content, and had a… (More)
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