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MOSFETs with high-k gate stack (HfAlO<sub>x</sub>/SiO<sub>2</sub>) and those with SiO<sub>2</sub> showed characteristic degradation induced by Ar-based electron cyclotron resonance (ECR) plasma, i.e., the increase in off-state leakage current (I<sub>Off</sub>). The measurements of all source-to-drain current paths in MOSFETs revealed that the leakage(More)
A semicylindrical acoustic transducer was constructed using a dielectric elastomer film with compliant electrodes that is an electroactive polymer composed of a polyurethane elastomer base and polyethylene dioxythiophene/polystyrene sulfonate electrodes. The use of this dielectric elastomer is advantageous because polyurethane is a common material that(More)
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO<sub>2</sub>) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO<sub>2</sub>. For Ar-plasma, which was confirmed to induce a larger(More)
We discuss plasma charging damage (PCD) to high-k gate dielectrics, in particular, the threshold voltage shift (&#x0394;V<sub>th</sub>) in metal-oxide-semiconductor field-effect transistors (MOSFETs). The PCD induced by the antenna effect is focused on, and &#x0394;V<sub>th</sub> and its variation are estimated for MOSFETs treated by various plasma(More)
UNLABELLED Emission rates of p-dichlorobenzene (pDCB) from five kinds of commercially available moth repellents and leakage rates from six kinds of commercially available cloth storage cases were measured. The emission rates from moth repellents immediately after purchase (E(max)), which were obtained as the slope of the total emission amount vs. time(More)
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL)(More)