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In this paper, we have analyzed and modeled failure probabilities (access-time failure, read/write failure, and hold failure) of synchronous random-access memory (SRAM) cells due to process-parameter variations. A method to predict the yield of a memory chip based on the cell-failure probability is proposed. A methodology to statistically design the SRAM(More)
Process parameter variations are expected to be significantly high in a sub-50-nm technology regime, which can severely affect the yield, unless very conservative design techniques are employed. The parameter variations are random in nature and are expected to be more pronounced in minimum geometry transistors commonly used in memories such as SRAM.(More)
Deep-submicron CMOS designs maintain high transistor switching speeds by scaling down the supply voltage and proportionately reducing the transistor threshold voltage. Lowering the threshold voltage increases leakage energy dissipation due to subthreshold leakage current even when the transistor is not switching. Estimates suggest a five-fold increase in(More)
Where you can find the low power cmos vlsi circuit design easily? Is it in the book store? On-line book store? are you sure? Keep in mind that you will find the book in this site. This book is very referred for you because it gives not only the experience but also lesson. The lessons are very valuable to serve for you, that's not about who are reading this(More)
Low power is an imperative requirement for portable multimedia devices employing various signal processing algorithms and architectures. In most multimedia applications, human beings can gather useful information from slightly erroneous outputs. Therefore, we do not need to produce exactly correct numerical outputs. Previous research in this context(More)
Low-power is an imperative requirement for portable multimedia devices employing various signal processing algorithms and architectures. In most multimedia applications, the final output is interpreted by human senses, which are not perfect. This fact obviates the need to produce exactly correct numerical outputs. Previous research in this context exploits(More)
We propose a novel Schmitt Trigger (ST) based fully differential 10 transistor SRAM (Static Random Access Memory) bitcell suitable for sub-threshold operation. The proposed Schmitt trigger based bitcell achieves 1.56X higher read static noise margin (SNM) (VDD = 400mV) compared to the conventional 6T cell. The robust Schmitt trigger based memory cell(More)
In this paper we have developed analytical models to estimate the mean and the standard deviation in the gate, the subthreshold, the reverse biased source/drain junction band-to-band-tunneling (BTBT) and the total leakage in scaled CMOS devices considering variation in process parameters like device geometry, doping profile, flat-band voltage and supply(More)