Katsumi Shinomura

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A new horizontal current bipolar transistor (HCBT) with a single polysilicon region and a CMOS gate polysilicon near the n<sup>+</sup> emitter region is integrated with CMOS technology with the(More)
Methods for the extrinsic collector fabrication of the Horizontal Current Bipolar transistor (HCBT) in 180 nm BiCMOS technology are presented. Electrical characteristics of the structure with(More)
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