Katsumi Dosaka

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This paper describes a novel TCAM architecture with associated embedded DRAM. The design concept improves the soft error immunity by 6 digits, and also resolves the critical problems of the look-up table maintenance of TCAM. The proposed architecture in this paper is especially attractive for realizing soft-error immune, high-performance TCAM chips.
Using radiolabeled microspheres, spinal cord blood flow was measured after spinal subarachnoid injections of 3.1- to 12.5-nmol doses of somatostatin through either indwelling i.t. catheters or acutely inserted intervertebral needles. With either injection technique, somatostatin caused significant dose-dependent reductions in thoracic and lumbosacral blood(More)
An 18-Mb full ternary CAM with low-voltage matchline sensing scheme (LVMLSS) is designed and fabricated in 65-nm bulk CMOS process. LVMLSS has three key techniques: voltage down converter, differential sense amplifier with matchline isolation, and reference voltage generation scheme. With these techniques, LVMLSS can reduce the dynamic power consumption of(More)
Ternary CAMs (TCAMs) are becoming increasingly important for realizing networking applications such as address classification or packet filtering. Unfortunately, conventional static TCAMs have three critical problems to be addressed: (i) large chip size, (ii) high power dissipation, and (iii) low yield caused by the lack of an efficient redundancy(More)
This paper describes a novel TCAM architecture designed for enhancing the soft-error immunity. An associated embedded DRAM and ECC circuits are placed next to TCAM macro to implement a unique methodology of recovering upset bits due to soft errors. The proposed configuration allows an improvement of soft-error immunity by 6 orders of magnitude compared with(More)
We propose a novel capacitorless twin-transistor random access memory (TTRAM). The 2Mb test device has been fabricated on 130nm SOI-CMOS process. We demonstrate the TTRAM cell has two data-storage states and confirm the data retention time of 100ms at 80/spl deg/C. TTRAM process is compatible with the conventional SOI-CMOS and never requires any additional(More)