Katsuhisa Senda

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A new fabrication process is proposed for eliminating the fixed pattern noise in a CCD image sensor with a vertical overflow drain structure, which is sensitive to the non-uniformity of the crystal. In this method, the internally gettered epitaxial wafer is used as the starting material for fabrication of the CCD image sensor. Use of the epitaxial layer,(More)
We call a CG character with intelligent autonomy a humanoid agent. The humanoid agent technique has the potential to open up new worlds in consumer electronics, especially in the fields of communication and entertainment. We explain the mechanism of HAE (humanoid agent engine) driven by a human's emotion and "KANSEI" (intuition) as a core technique. We also(More)
An SOI image sensor where the read-out transistors are well isolated from the silicon substrate is proposed. The isolation results in remarkable reduction of the photo-leakage current to a value as low as 1/8000 times that in the conventional bulk transistors, implying the corresponding reduction of smear noise of the sensor. It is pointed out also that the(More)
A 398 (H) × 496 (V)-element CPD image sensor with buried-channel charge-priming-transfer (CPT) couplers for ⅔-in format has been developed. The buried-channel CPT structures by use of the external bias change has been adopted based on the theoretical consideration to suppress random noise and to improve vertical transfer efficiency for small(More)
An analysis is given of the charge-priming transfer (CPT) in the CPD image sensor. The CPT consists of two transfer processess, priming transfer and skimming transfer. Approximate expressions for these transfer efficiencies are obtained. A high-efficiency CPT has been achieved for a CPD image sensor; the design was optimized with the aid of the present(More)
A CPD image sensor with the p-well structure having two kinds of impurity profiles has been developed. The potential along the depth of the n-p-n photodiode in the p-well is calculated for a linearly graded junction. Based on this calculation, the capability of the blooming suppression and the dynamic range of the photodiode are discussed. The blooming(More)
A monolithic integration of the horizontal driver circuit into the LCD substrate is demonstrated. The operation frequency of the TFT driver was elevated up to 10MHz by successful use of the laser-recrystallization technique. The horizontal driver circuit, of which the unit stage is composed of a D-flip flop shift register and 2- stage buffer amplifier, was(More)
A stacked-CMOS SRAM cell with a polysilicon p-channel thin-film transistor (TFT) load that has been attracting much attention as a high-density and low-standby-current SRAM is considered. The authors demonstrate a high-performance stacked-CMOS SRAM cell with remarkably improved polysilicon p-channel TFT load characteristics: a leakage-current of 0.07(More)
This paper analyzes the stability of the amplitude death phenomenon that occurs in a pair of scalar time-delay nonlinear oscillators coupled by static, dynamic, and delayed connections. Stability analysis shows that static connections never induce death in time-delay oscillators. Further, for the case of dynamic and delayed connections, a simple instability(More)
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