Karsten Rott

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The vortex state, characterized by a curling magnetization, is one of the equilibrium configurations of soft magnetic materials and occurs in thin ferromagnetic square and disk-shaped elements of micrometre size and below. The interplay between the magnetostatic and the exchange energy favours an in-plane, closed flux domain structure. This curling(More)
— An accurate understanding of oxide traps is essential for a number of reliability issues, including the bias temperature instability, hot carrier degradation, time-dependent dielectric breakdown, random telegraph and 1/f noise. Recent results have demonstrated that hole capture and emission into oxide traps in pMOS transistors are more complicated than(More)
We describe an atomic force microscope (AFM) for the characterization of self-sensing tunneling magnetoresistive (TMR) cantilevers. Furthermore, we achieve a large scan-range with a nested scanner design of two independent piezo scanners: a small high resolution scanner with a scan range of 5 × 5 × 5 μm(3) is mounted on a large-area scanner with a scan(More)
Magnetostrictive tunnel magnetoresistance (TMR) sensors pose a bright perspective in micro- and nano-scale strain sensing technology. The behavior of TMR sensors under mechanical stress as well as their sensitivity to the applied stress depends on the magnetization configuration of magnetic tunnel junctions (MTJ)s with respect to the stress axis. Here, we(More)
We report measurements of the cross-plane thermal conductivity of periodic Co/Cu multilayers using time-domain thermoreflectance. The cross-plane thermal conductivity increases from ∼18 W m −1 K −1 at remanence to ∼32 W m −1 K −1 at saturation fields. This giant magnetothermal resistance (GMTR) effect is consistent with predictions based on the(More)
Thermoelectric effects in magnetic tunnel junctions are promising to serve as the basis for logic devices or memories in a "green" information technology. However, up to now the readout contrast achieved with Seebeck effects was magnitudes smaller compared to the well-established tunnel magnetoresistance effect. Here, we resolve this problem by(More)
—We propose a new method to determine the lateral position of border traps in MOSFETs. The approach is based on the dependence of the trap-induced threshold voltage shift on the drain bias which is sensitive to the trap position. This follows from the results obtained with both technology computer aided design (TCAD) simulations and with a compact model.(More)
We explore the ultrafast limit of spin torque magnetization reversal time. Spin torque precession during a spin torque current pulse and free magnetization ringing after the pulse is detected by time-resolved magnetotransport. Adapting the duration of the pulse to the precession period allows coherent control of the final orientation of the magnetization.(More)
The intrinsic dc conductivity of long, individual lambda phage dsDNA molecules has been investigated by ultrasensitive low current-voltage-spectroscopy (IV) under ambient conditions and controlled low humidity inert gas atmosphere on microfabricated metal-insulator-metal gap structures. We found a strong dependence of the measured conductivity on the(More)
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