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(2008). Assessing creativity with divergent thinking tasks: Exploring the reliability and validity of new subjective scoring methods. Abstract: Divergent thinking is central to the study of individual differences in creativity, but the traditional scoring systems (assigning points for infrequent responses and summing the points) face well-known problems.(More)
—The classical concept and theory suggest that the degradation of MOS transistors is caused by interface trap generation resulting from " hot carrier injection. " We report three new experiments that use the deuterium isotope effect to probe the mechanism for interface trap generation in n-MOS transistors in the presence of hot hole and electron injection.(More)
We analyze the assumptions that are made in the proofs of Bell-type inequalities for the results of Einstein-Podolsky-Rosen type of experiments. We find that the introduction of time-like random variables permits the construction of a broader mathematical model which accounts for all correlations of variables that are contained in the time dependent(More)
We present a modified local realistic model, based on instruction sets that can be used to approximately reproduce the data of the Pan et al experiment. The data of our model are closer to the results of the actual experiment by Pan et al than the predictions of their quantum mechanical model. As a consequence the experimental results can not be used to(More)
The fundamental connection between electron stimulated desorption ͑ESD͒ of hydrogen ͑H͒/ deuterium ͑D͒ at silicon surfaces in ultrahigh vacuum and hot-carrier-stimulated desorption of H/D at the oxide/silicon interfaces in complementary metal–oxide–semiconductor ͑CMOS͒ devices is presented. The dependences of device degradation on carrier energy and current(More)