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An optical transmitter and receiver with monolithically-integrated photonic devices and circuits are demonstrated together for the first time in a commercial 45nm SOI process, without any process changes. The transmitter features an interleaved-junction carrier-depletion ring modulator and operates at 3.5Gb/s with an 8dB extinction ratio and combined(More)
We demonstrate the first (to the best of our knowledge) depletion-mode carrier-plasma optical modulator fabricated in a standard advanced complementary metal-oxide-semiconductor (CMOS) logic process (45 nm node SOI CMOS) with no process modifications. The zero-change CMOS photonics approach enables this device to be monolithically integrated into(More)
—Silicon-photonics is an emerging technology that can overcome the tradeoffs faced by traditional electrical I/O. Due to ballooning development costs for advanced CMOS nodes, however, widespread adoption necessitates seamless photonics integration into mainstream processes, with as few process changes as possible. In this work, we demonstrate a(More)
We demonstrate the first depletion-mode modulators in polysilicon bulk CMOS. They use a new, wiggler-mode microcavity for process compatibility with fully-etched silicon and lateral pn junctions. We show 4.2dB extinction and 60fJ energy/bit at 5Gbps. Silicon photonics promises to provide energy efficient CPU-to-memory interconnects, critical to enabling(More)
We demonstrate depletion-mode carrier-plasma optical modulators fabricated in a bulk complementary metal-oxide semiconductor (CMOS), DRAM-emulation process. To the best of our knowledge, these are the first depletion-mode modulators demonstrated in polycrystalline silicon and in bulk CMOS. The modulators are based on novel optical microcavities that utilize(More)
We propose and demonstrate the first asymmetric unidirectional grating couplers fabricated in a 45nm unmodified CMOS process. Measured coupling efficiency from fiber-to-chip is ∼ 40 %. Simulations show >70% efficiency is achievable with same design. In the last few years, sub-100nm commercially available unmodified CMOS processes have renewed interest in(More)
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