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We review the basics of the extremely thin SOI (ETSOI) technology and how it addresses the main challenges of the CMOS scaling at the 20-nm technology node and beyond. The possibility of V<sub>T</sub> tuning with backbias, while keeping the channel undoped, opens up new opportunities that are unique to ETSOI. The main device characteristics with regard to(More)
The fundamental connection between electron stimulated desorption ͑ESD͒ of hydrogen ͑H͒/ deuterium ͑D͒ at silicon surfaces in ultrahigh vacuum and hot-carrier-stimulated desorption of H/D at the oxide/silicon interfaces in complementary metal–oxide–semiconductor ͑CMOS͒ devices is presented. The dependences of device degradation on carrier energy and current(More)
813 using zero VD in extracting asymptotic VT is minimal. A final note is that V T extracted in this paper is intended for the threshold voltage of strong inversion, and a different V T may be needed for characterizing the onset of subthreshold region. V. CONCLUSIONS Design and modeling of submicron MOSFETs require an accurate theoretical definition for the(More)
A track-and-hold amplifier for use in high-speed ADCs was implemented in a production AlGaAs/GaAs HBT process. Under Nyquist conditions, the fabricated ICs showed 11 effective number of bits (ENOBs) at 1 GS/s and >12 ENOBs at 800 MS/s. The large signal gain loss of these ICs was measured to be below 0.1 dB.
We present a detailed analysis of substrate bias (V<inf>bb</inf>) impact on gate induced drain leakage (GIDL) for thin-BOX extremely thin silicon-on-insulator (ETSOI) with BOX thickness (T<inf>BOX</inf>) ranging from 10 to 50 nm and inversion layer thicknesses (T<inf>INV</inf>) ranging from 1.1 to 1.3 nm. The GIDL behavior for thin-BOX under various(More)
Fully depleted SOI (FDSOI) has become a viable technology not only for continued CMOS scaling to 22 nm node and beyond but also for improving the performances of legacy technology when retrofitting to old technology nodes. In this paper, we provide an overview of FDSOI technology, including the benefits and challenges in FDSOI design, manufacturing, and(More)
In this paper, we present a 10nm CMOS platform technology for low power and high performance applications with the tightest contacted poly pitch (CPP) of 64nm and metallization pitch of 48nm ever reported in the FinFET technology on both bulk and SOI substrates. A 0.053um<sup>2</sup> SRAM bit-cell is reported with a corresponding Static Noise Margin (SNM)(More)
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