Kangguo Cheng

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Extremely thin SOI (ETSOI) MOSFET is an attractive candidate for 22nm technology and beyond due to its excellent short channel control, low leakage current, and immunity to random dopant fluctuation [1-5]. Short channel effects are mainly controlled by channel thickness, so there is no need for aggressive scaling of the gate dielectric. Thus the gate(More)
We review the basics of the extremely thin SOI (ETSOI) technology and how it addresses the main challenges of the CMOS scaling at the 20-nm technology node and beyond. The possibility of V<sub>T</sub> tuning with backbias, while keeping the channel undoped, opens up new opportunities that are unique to ETSOI. The main device characteristics with regard to(More)
The fundamental connection between electron stimulated desorption ~ESD! of hydrogen ~H!/ deuterium ~D! at silicon surfaces in ultrahigh vacuum and hot-carrier-stimulated desorption of H/D at the oxide/silicon interfaces in complementary metal–oxide–semiconductor ~CMOS! devices is presented. The dependences of device degradation on carrier energy and current(More)
Fully depleted SOI (FDSOI) has become a viable technology not only for continued CMOS scaling to 22 nm node and beyond but also for improving the performances of legacy technology when retrofitting to old technology nodes. In this paper, we provide an overview of FDSOI technology, including the benefits and challenges in FDSOI design, manufacturing, and(More)
Several new phenomena are observed comparing the ac stress with the dc stress. In the initial stress period ( 30 s), the deuterium isotope effect is smaller for ac stress than for dc stress, which is ascribed to the hole injection. In the final stress stage ( 10 s), the saturation of the degradation stops and the degradation starts to increase again for ac(More)
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