Kangguo Cheng

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The fundamental connection between electron stimulated desorption ͑ESD͒ of hydrogen ͑H͒/ deuterium ͑D͒ at silicon surfaces in ultrahigh vacuum and hot-carrier-stimulated desorption of H/D at the oxide/silicon interfaces in complementary metal–oxide–semiconductor ͑CMOS͒ devices is presented. The dependences of device degradation on carrier energy and current(More)
Fully depleted SOI (FDSOI) has become a viable technology not only for continued CMOS scaling to 22 nm node and beyond but also for improving the performances of legacy technology when retrofitting to old technology nodes. In this paper, we provide an overview of FDSOI technology, including the benefits and challenges in FDSOI design, manufacturing, and(More)
813 using zero VD in extracting asymptotic VT is minimal. A final note is that V T extracted in this paper is intended for the threshold voltage of strong inversion, and a different V T may be needed for characterizing the onset of subthreshold region. V. CONCLUSIONS Design and modeling of submicron MOSFETs require an accurate theoretical definition for the(More)
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