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The spin-transfer nano-oscillator (STNO) offers the possibility of using the transfer of spin angular momentum via spin-polarized currents to generate microwave signals. However, at present STNO microwave emission mainly relies on both large drive currents and external magnetic fields. These issues hinder the implementation of STNOs for practical(More)
We demonstrate vertical graphene-base hot-electron transistors (GB-HETs) with a variety of structures and material parameters. Our GB-HETs exhibit a current saturation with a high current on-off ratio (>10(5)), which results from both the vertical transport of hot electrons across the ultrathin graphene base and the filtering of hot electrons through a(More)
It is well recognized that novel computational models, devices and technologies are needed in order to sustain the remarkable advancement of CMOS-based VLSI circuits and systems. Regardless of the models, devices and technologies, any enhancement/replacement to CMOS must show significant gains in at least one of the key metrics (including speed, power and(More)
Graphene's single atomic layer of sp(2) carbon has recently garnered much attention for its potential use in electronic applications. Here, we report a memory application for graphene, which we call graphene flash memory (GFM). GFM has the potential to exceed the performance of current flash memory technology by utilizing the intrinsic properties of(More)
—Atomistic quantum transport simulations of a large ensemble of devices are employed to investigate the impact of different sources of disorder on the transport properties of extremely scaled (length of 10 nm and width of 1–4 nm) graphene nanoribbons. We report the dependence of the transport gap, ON-and OFF-state conductances, and ON–OFF ratio on(More)
Graphene has attracted considerable interest as a potential new electronic material. With its high carrier mobility, graphene is of particular interest for ultrahigh-speed radio-frequency electronics. However, conventional device fabrication processes cannot readily be applied to produce high-speed graphene transistors because they often introduce(More)
We apply the full power of modern electronic band-structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single-donor electron spin. Spin-resonance transistors may form the technological basis for quantum information processing. One-and two-qubit operations are performed by applying a gate bias. The bias(More)
Lattice thermal conductivity of a quantum well limited by umklapp, impurity, and boundary scattering was investigated theoretically by taking into account dispersion of confined acoustic-phonon modes. We show that strong modification of phonon group velocities due to spatial confinement leads to a significant increase in the phonon relaxation rates. From(More)
The advantages of printed electronics and semiconducting single-walled carbon nanotubes (SWCNTs) are combined for the first time for display electronics. Conductive silver ink and 98% semiconductive SWCNT solutions are used to print back-gated thin film transistors with high mobility, high on/off ratio, and high current carrying capacity. In addition, with(More)