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–The device performance of armchair edge graphene nanoribbon Schottky barrier field effect transistors (A-GNR SBFETs) over different edge roughness and widths are investigated over a wide range of devices in terms of IB ONB /IB OFF. Generally, wider GNRs outperform narrower GNRs in the presence of edge roughness effects with average leakage current reduced(More)
An UWA communication system that uses coherent pseudo-random-phase carrier COFDA4 modulation is presented. The system shares the advantages of the correlating receiver of the direct sequence spread spectrum system and COFDkt modulation. A feature of the new system is the use of a pseudo-random Gaussian noise signal as a channel sounding probe to measure the(More)
We present an efficient approach to study the carrier transport in graphene nanoribbon (GNR) devices using the non-equilibrium Green's function approach (NEGF) based on the Dirac equation calibrated to the tight-binding π-bond model for graphene. The approach has the advantage of the computational efficiency of the Dirac equation and still captures(More)
– The structural effects of different graphene nanoribbon resonant tunneling diodes (GNR-RTDs) are investigated under different temperatures. Although the W-shape structure outperforms the H-shape structure in term of the peak current, the peak-to-valley ratio of the H-shape is higher than the W-shape due to the smaller peak currents of the former.(More)
In our ab initio study on the device performance of nitrogen-doped monolayer zigzag GNR (ZGNR) FETs, an increase in ZGNR width from 0.92 nm to 1.78 nm degrades the I max /I min ratio due to the decrease in the energy bandgap (E g) which causes the I min to increase. It is also observed that the presence of vacancy at the edges of the channel ribbon can also(More)
The recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high-efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy-free 2D(More)
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