Kai-Hung Cheng

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This paper studies the effect of doping on BON-based resistive switching characteristics. Typical bipolar resis-tive switching behavior can be observed in Pt/BON/TiN and Pt/BON:Gd/TiN devices. The conductive path(s) of the Pt/BON/TiN is vacancy-dominated while the Pt/BON:Gd/TiN is metal-dominated. Additionally, there is an atypical bipolar resistive(More)
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