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Journals and Conferences
Silicon antireflection is realized with vertical-aligned SiNWs by using improved metal-induced etching technique. The spectral responses of the transmission, reflection, and absorption characteristics for the SiNWs of different lengths are investigated. In order to realize short SiNWs to provide sufficiently low reflection, a post chemical etching process… (More)
Silicon nanowire arrays realized by depositing thin silver film before etching are demonstrated to have good material and optical properties. They can provide <0.4% antireflection over >1400-nm wavelength range for large-area silicon samples.