Kadhair Al-hemyari

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Nonlinearity measurements of microwave-bandwidth InGaAs metal-semiconductor-metal photodetectors have been performed. The devices show nonlinear characteristics which are similar to p-i-n structures despite a less-uniform electric field within the absorbing region. The nonlinear response versus applied voltage, nonlinearity growth rate versus current,(More)
We have developed and characterized a voltage-sensitive picosecond probe that can make non-invasive measurements either with direct contact to a metal electrode or through a passivation layer. While the utility of freely-positionable photoconductive probes has been substantiated for both high- and low-impedance testing of electronics, the invasiveness (in(More)
Packaging of optoelectronic devices becomes more and more challenging due to higher heat generation per unit volume. We experimentally investigated the packaging thermal resistance for a semiconductor laser device and compared results for two material alternatives for the electrical passivation layer. We used the time-resolved thermoreflectance technique to(More)
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