Kab Jin Nam

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Capacitor manufacturing technology for 0.13 /spl mu/m design rule 1 Gbit DRAMs has been developed using an improved MIS (metal-insulator-semiconductor) tantalum oxide capacitor module process in a cylinder-shaped storage node with rugged-type inner surface (called inner cylinder). Capacitance of more than 26 fF/cell, leakage current of below 0.2 fA/cell at(More)
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