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The original publication of the article listed above did not clearly state that the representative blots in Fig. 6 are composed of four separate images. As such, the reader may mistakenly presume that the representative bands in Fig. 6 were taken from contiguous lanes of a single blot as in Fig. 4. The purpose of this corrigendum is, first, to clarify that(More)
The influence of oxygen partial pressure during the deposition of piezoelectric strontium-doped lead zirconate titanate thin films is reported. The thin films have been deposited by RF magnetron sputtering in an atmosphere of high purity argon and oxygen (in the ratio of 9:1), on platinum-coated silicon substrates (heated to 650 degrees C). The influence of(More)
This article introduces a technique for observing and quantifying the piezoelectric response of thin films, using standard atomic force microscopes (AFMs). The technique has been developed and verified using strontium-doped lead zirconate titanate (PSZT) thin films, which are known for their high piezoelectric response. Quantification of the(More)
Single-pulse and cw measurements of the response of a semi-insulating CdZnTe/ZnTe multiple-quantum-well photorefractive device are presented. In single-pulse experiments, photodiffractive (absorption) gratings have been written with less than 1.8-microJ/cm(2) incident fluence, and a diffraction efficiency of 1.1% is obtained from the 1.56-microm active(More)
This article discusses the results of transmission electron microscopy (TEM)-based characterization of strontium-doped lead zirconate titanate (PSZT) thin films. The thin films were deposited by radio frequency magnetron sputtering at 300 degrees C on gold-coated silicon substrates, which used a 15 nm titanium adhesion layer between the 150 nm thick gold(More)
This article discusses the results of transmission electron microscopy (TEM)-based investigation of nickel silicide (NiSi) thin films grown on silicon. Nickel silicide is currently used as the CMOS technology standard for local interconnects and in electrical contacts. Films were characterized with a range of TEM-based techniques along with glancing angle(More)
In order to understand the development of the microbial population within a hot-drinks vending machine a new machine was placed in a staff area of a university campus vending only hot chocolate. The machine was cleaned weekly using a detergent based protocol. Samples from the mixing bowl, dispense area, and drink were taken over a 19-wk period and(More)
This article reports on the in situ analysis of nickel silicide (NiSi) thin films formed by thermal processing of nickel thin films deposited on silicon substrates. The in situ techniques employed for this study include micro-Raman spectroscopy (microRS) and X-ray diffraction (XRD); in both cases the variations for temperatures up to 350 degrees C has been(More)
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