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Recessed polysilicon encapsulated local oxidation
- K.J. Cooper, S. Roth, W. Ray, H. C. Kirsch, J. Ko
- Materials Science
- IEEE Electron Device Letters
- 1 October 1991
Local oxidation of silicon (LOCOS) is the most commonly used isolation technology in silicon integrated circuits. The inherently large field oxide encroachment associated with LOCOS severely limits… Expand