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Design of a 10 kW, 500 kHz phase-shift controlled series-resonant inverter for induction heating
A phase-shift-controlled series-resonant inverter is used as power supply for a 10 kW, 500 kHz induction heating system. Analysis of the system for power regulation with zero voltage switching isExpand
Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic n+-type doped GaAs
Photoreflectance spectroscopy of surface-intrinsic n+-doped (s-i-n+) GaAs has been measured at various power densities (Ppu) of a pump beam. Many Franz–Keldysh oscillations (FKOs) were observed aboveExpand
InN nanotips as excellent field emitters
Unidirectional single crystalline InN nanoemitters were fabricated on the silicon (111) substrate via ion etching. These InN nanoemitters showed excellent field emission properties with the thresholdExpand
A new approach for fluorescence subtraction in Raman spectroscopy
We report a new approach to extract weak Raman signal from a strong fluorescence background. The method utilizes a double-excitation technique with a laser and an LED as the excitation light sources.
Effect of Tantalum Content on Creep Properties of CLAM Steel
This paper presents the results of an experimental study about the effect of tantalum content on the creep properties of China low activation martensitic steel. Four heats of the steel with tantalumExpand
Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates
Abstract We report about the optical and structural characterization of m-plane InGaN/GaN multiple quantum well (MQW) structures. All samples were grown on 2-inch LiAlO2 substrates in AIXTRON MOVPEExpand
AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates
We demonstrate the application of nitrogen (N) implantation in GaN as a current-blocking layer. In a first step, vertical current-blocking behavior was confirmed by processing quasi-vertical SchottkyExpand
Plasma-Assisted Molecular Beam Epitaxy Grown InN Epifilm
Improved surface morphology in GaN homoepitaxy by NH3-source molecular-beam epitaxy
GaN homoepitaxial layers of improved surface morphology were obtained by a NH3-source molecular-beam epitaxy method supplying a proper reactive NH3-to-Ga flux ratio (V/III ratio) on the growingExpand
Polarization dependent noise characteristics in dual-pump fiber optical parametric amplifier
Fiber optic parametric amplifier (FOPA) often exhibits polarization-dependent gain and its noise characteristics are also polarization-dependent. In this article, noise figure for several basic typesExpand
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