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GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates
We have examined the performance of gallium nitride (GaN) high-power Schottky diodes fabricated on unintentionally doped (UID) metalorganic chemical vapor deposition (MOCVD) films grownExpand
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AlGaN devices and growth of device structures
The structure of a number of GaN/AlGaN devices and their associated material growth and processing issues are examined in some detail, and extrapolations are made to predict what the advantages andExpand
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Fabrication and characterization of native non-polar GaN substrates
Abstract Thick c- plane (0 0 0 1)-oriented native GaN boules that have been produced by hydride vapor phase epitaxy and non-polar native m- plane (1  1  0 0) and a- plane (1 1  2  0) GaN substratesExpand
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Indium incorporation in InGaN/GaN quantum wells grown on m‐plane GaN substrate and c‐plane sapphire
, Phone: (þ886) 3-4227151 ext: 25256, Fax: (þ886) 3-4252897InGaN/GaN quantum wells (QWs) grown at identical con-ditions on m-plane GaN and c-plane sapphire substrates werecharacterized by severalExpand
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Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN
Abstract In this study we report the potential and limitations of the cathodoluminescence dark spot (DS) counting as a method for the determination of dislocation density and distribution in GaN,Expand
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Charge transfer in semi-insulating Fe-doped GaN
Charge transfer kinetics is studied in free-standing Fe-doped GaN using photo-induced electron paramagnetic resonance (EPR). Samples with Fe concentrations of 1017 cm−3 reveal an increase in Fe3+Expand
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Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates
InGaN/GaN quantum wells (QWs) grown with identical conditions on m-plane and c-plane GaN substrates were studied by cathodoluminescence spectroscopy. At a low current of 10 nA, the emission intensityExpand
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Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy
We demonstrate hydride vapor phase epitaxy (HVPE) of AlxGa1–xAs, AlxIn1–xP, and AlxGayIn1–x–yP using an AlCl3 precursor. We study the growth of the AlxGa1–xAs alloy system to elucidate the effects ...
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Large-area bow-free n+ GaN templates by HVPE for LEDs
The economic and energy efficiency promise of solid state lighting drive a continuous need to reduce the cost and improve the efficiency of visible LEDs. Current III-N LED manufacturing is dominatedExpand
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Evaluation of the concentration of point defects in GaN
Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation spectroscopy (PAS), secondary ion massExpand
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