Learn More
A 45 nm logic technology is described that for the first time incorporates high-k + metal gate transistors in a high volume manufacturing process. The transistors feature 1.0 nm EOT high-k gate(More)
A leading edge 90 nm technology with 1.2 nm physical gate oxide, 50 nm gate length, strained silicon, NiSi, 7 layers of Cu interconnects, and low k carbon-doped oxide (CDO) for high performance dense(More)