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Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template
High efficiency GaN-based light-emitting diodes (LEDs) are demonstrated by a nanoscale epitaxial lateral overgrowth (NELO) method on a SiO2 nanorod-array patterned sapphire substrate (NAPSS). TheExpand
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  • Open Access
Optical Cross-talk Reduction in a Quantum-dot-based Full-color Micro-light-emitting-diode Display by a Lithographic-fabricated Photoresist Mold
In this study, a full-color emission red–green–blue (RGB) quantum-dot (QD)-based micro-light-emitting-diode (micro-LED) array with the reduced optical cross-talk effect by a photoresist mold has beenExpand
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  • Open Access
Low-Leakage-Current AlN/GaN MOSHFETs Using $ \hbox{Al}_{2}\hbox{O}_{3}$ for Increased 2DEG
Metal-oxide-semiconductor heterostructure field effect transistors (MOSHFETs) were fabricated with an AlN/GaN heterostructure grown on Si substrates. A 7-nm Al<sub>2</sub>O<sub>3</sub> serving asExpand
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  • Open Access
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
In this paper, we present a systematic investigation of metal–organic chemical vapor deposition-grown <italic>in situ</italic> SiN as the gate dielectric and surface passivation for AlGaN/GaN metalExpand
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  • Open Access
AlGaAs superlattice microcoolers
AlGaAs-based superlattice microcoolers are demonstrated. Maximum cooling temperatures of 0.8 °C and 2 °C were obtained at 25 °C and 100 °C, respectively, from 60 μm×60 μm devices with 100 periodExpand
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Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon
We report the use of highly ordered, dense, and regular arrays of in-plane GaAs nanowires as building blocks to produce antiphase-domain-free GaAs thin films on exact (001) silicon. High quality GaAsExpand
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  • Open Access
Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric
Interface trapping is one of the most notorious effects that limit device performance in GaN-based MIS high electron mobility transistors (MISHEMTs). In this paper, we present a comprehensive studyExpand
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  • Open Access
Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing
We report on the reduction of off-state leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) by a two-step process combining pre-gate surface treatment and post-gate annealingExpand
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  • Open Access
Efficient wet etching of GaN and p-GaN assisted with chopped UV source
Abstract We studied electrodeless photoelectrochemical (ELPEC) etching of GaN in a K2S2O8/KOH solution irradiated either continuously or periodically with ultraviolet (UV) light. The rate ofExpand
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1.3 μm Submilliamp Threshold Quantum Dot Micro-lasers on Si
As a promising integration platform, silicon photonics need on-chip laser sources that dramatically improve capability, while trimming size and power dissipation in a cost-effective way for volumeExpand
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