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- Terry Yao, M Gordon, +4 authors S. P. Voinigescu
- IEEE Journal of Solid-State Circuits
- 2007

Sixty-gigahertz power (PA) and low-noise (LNA) amplifiers have been implemented, based on algorithmic design methodologies for mm-wave CMOS amplifiers, in a 90-nm RF-CMOS process with thickâ€¦ (More)

- Gregory Avenier, M. Diop, +18 authors A. Chantre
- IEEE Journal of Solid-State Circuits
- 2009

This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz f<sub>T</sub>/f<sub>MAX</sub>) and mediumâ€¦ (More)

- T G Dickson, K. H. K. Yau, +7 authors S. P. Voinigescu
- IEEE Journal of Solid-State Circuits
- 2006

This paper provides evidence that, as a result of constant-field scaling, the peak f<sub>T</sub> (approx. 0.3 mA/mum), peak f<sub>MAX </sub> (approx. 0.2 mA/mum), and optimum noise figureâ€¦ (More)

- Emma Laskin, K. W. Tang, +4 authors S. P. Voinigescu
- 2008 IEEE Radio Frequency Integrated Circuitsâ€¦
- 2008

A single-chip transceiver with on-die transmit and receive antennas, Rx and Tx amplifiers, 165-GHz oscillator and static frequency divider is reported in a SiGe HBT process withâ€¦ (More)

- S. T. Nicolson, K. H. K. Yau, +6 authors S. P. Voinigescu
- IEEE Transactions on Microwave Theory andâ€¦
- 2008

This paper presents a complete 2.5-V 77-GHz chipset for Doppler radar and imaging applications fabricated in SiGe HBT and SiGe BiCMOS technologies. The chipset includes a 123-mW single-chip receiverâ€¦ (More)

- S. T. Nicolson, K. H. K. Yau, +4 authors S. P. Voinigescu
- IEEE Journal of Solid-State Circuits
- 2007

This paper discusses the design of 77-106 GHz Colpitts VCOs fabricated in two generations of SiGe BiCMOS technology, with MOS and HBT varactors, and with integrated inductors. Based on a study of theâ€¦ (More)

- Sorin P. Voinigescu, Sean T. Nicolson, +8 authors M. T. Yang
- 2007 IEEE International Symposium on Circuits andâ€¦
- 2007

This paper investigates the suitability of 90nm and 65nm GP and LP CMOS technology for SOC applications in the 60GHz to 100GHz range. Examples of system architectures and transceiver building blocksâ€¦ (More)

- K. H. K. Yau, S. P. Voinigescu
- Digest of Papers. 2006 Topical Meeting on Siliconâ€¦
- 2006

The technique to extract the SiGe HBT noise parameters only from the measured y-parameters is extended to account for the presence of noise correlation. Unlike earlier publications, this method doesâ€¦ (More)

- S. T. Nicolson, K.A. Tang, K. H. K. Yau, P. Chevalier, Bernard Sautreuil, S. P. Voinigescu
- 2007 IEEE/MTT-S International Microwave Symposium
- 2007

This paper presents the first complete 2.5 V, 77 GHz chipset for Doppler radar and imaging applications fabricated in 0.13 mum SiGe HBT technology. The chipset includes a voltage-controlledâ€¦ (More)

- Eric Dacquay, Andrew Tomkins, +5 authors S. P. Voinigescu
- IEEE Transactions on Microwave Theory andâ€¦
- 2012

A D-band SiGe HBT total power radiometer is reported with a peak responsivity of 28 MV/W, a noise equivalent power (NEP) of 14-18 fW/Hz<sup>1/2</sup>, and a temperature resolution better than 0.35 Kâ€¦ (More)