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High-power quantum well lasers with high brightness in the spectral range between 650 nm and 1080 nm will be presented. Improved layer structures with a narrow vertical far-field divergence down to… (More)
We report a compact single-chip optical transmitter with 0.4-W output optical modulation amplitude at 1 Gb/s using a twin-contact directly modulated laser with an applied ?100-mA current swing.… (More)
Distributed Bragg reflector tapered lasers emitting at a wavelength of about 1060 nm were realized. The expitaxial layer structure leads to a vertical far-field angle of 15deg (full-width at… (More)
High-brightness laser diode technology is progressing rapidly in response to competitive and evolving markets. The large volume resonators required for high-power, high-brightness operation makes… (More)
High brightness tapered lasers emitting around 650 nm were developed. We realized 2-mm-long devices with 750-mum straight section, 1250-mum tapered section, and 4deg taper angle. The input currents… (More)
This paper investigates the impact of lateral radiation losses in ridge waveguide (RW) lasers emitting around 1064 nm is investigated. The RWs are fabricated by dry etching of pairs of trenches with… (More)
Q-switching of a 1060 nm quantum-well tapered DBR laser is investigated. Single-mode optical pulses are generated with a peak power of 3.4W, pulse energy of 1nJ and a FWHM spectral width of ≤0.09 nm.
High power diode lasers are the most efficient technology for converting electrical input power into optical output power. Their efficiency and low manufacturing cost lead to their being the… (More)
High-power diode lasers with a nearly diffraction limited beam quality and a narrow spectral width are requested as efficient excitation sources for non-linear frequency conversion. Semiconductor… (More)