Inhibition of pyramid formation in the etching of Si p(100) in aqueous potassium hydroxide-isopropanol
- S. Campbell, K. Cooper, L. Dixon, R. Earwaker, S. Port, D. Schiffrin
- Chemistry
- 1 September 1995
Production of smooth, defect-free silicon surfaces is essential for the fabrication of precise three-dimensional devices. Micromachining usually involves anisotropic etching in alkaline media such as…
Characterization of polysilicon-encapsulated local oxidation
Device isolation has been most commonly achieved through the use of local oxidation of silicon (LOCOS) or LOCOS derivatives. LOCOS is a highly dependable, low-defect isolation technique, which…
Recessed polysilicon encapsulated local oxidation
Local oxidation of silicon (LOCOS) is the most commonly used isolation technology in silicon integrated circuits. The inherently large field oxide encroachment associated with LOCOS severely limits…
A new toroidal TFT structure for future generation SRAMs
- J. Hayden, K. Cooper, S. Roth, H. Kirsch
- Engineering, PhysicsProceedings of IEEE International Electron…
- 5 December 1993
A new toroidal TFT structure has been developed for future generation SRAM products. This new TFT provides excellent device performance at scaled power supply voltages and offers significant savings…
PELOX integrated PBL
Polysilicon buffered LOCOS (PBL) does not exhibit sufficient field oxide recess to support aggressive device scaling without the introduction of processes which are difficult to control. Recently,…
OFFSET TRENCH ISOLATION
- S. Roth, K. Cooper, W. Ray, H. Kirsch, C. L. Grove
- Materials Science
- 1 August 1994
Formation of electrically isolated structure in integrated circuit
- K. Cooper, P. Kenkare, プラシャント・ケンカレ
- Chemistry, Engineering
- 1 December 1993
PURPOSE: To achieve the perfect isolation of field oxide by using the laminated layer of thermal silicon dioxide, and depositing the oxide mask under the silicon oxide field with the silicon dioxide…
Magnetically enhanced reactive ion etching of submicron silicon trenches
Submicron trench etching of single crystal silicon was studied in a single wafer magnetically enhanced reactive ion etching system. Trenches were etched with both HBr/SiF4/NF3/Iie/02 and HBr/SiF4…
A semiconductor device comprising side wall gate and processes for preparing
- K. Cooper, H. Kirsch, S. Roth, James D Hyaden
- Engineering
- 15 April 1993