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A photoelectron diffraction study of Ta(100), employing the surface shifted 4 f core levels, has been performed to determine its first interplanar spacing. Photoemission intensities of the bulk and… (More)
Abstract Magneto-transport measurements have been performed on epitaxial layers of ErAs buried inside insulating GaAs with thicknesses from 15 nm (bulk like) to 0.7 nm (quantum confined).… (More)
Successful growth of (100)ErAs and (100)LuAs single crystal films on (100)GaAs has been demonstrated. Reflection high‐energy electron diffraction, low‐energy electron diffraction (LEED),… (More)
Films of CoGa and CoAs have been deposited on Ga1−xAlxAs surfaces. Control of the Ga1−xAlxAs surface prior to CoGa deposition results in the preferential formation of two epitaxial orientations,… (More)
We have demonstrated growth of high quality single crystal CoGa films on Ga 1−x Al x As. These films were fabricated in-situ by codeposition of Co and Ga on MBE grown Ga 1−x Al x As(100) surfaces.… (More)
The interface between the (001) surface of GaAs and a CoGa layer grown by molecular beam epitaxy has been characterized using transmission electron microscopy in plan view and cross‐sectional view.… (More)