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We report excellent switching uniformity and reliability of RRAM device with ZrO<inf>x</inf>/HfO<inf>x</inf> bi-layer films. Precise control of the oxygen vacancy concentration in HfO<inf>2</inf>(More)
Monte Carlo simulations have been carried out using the FLUKA code to improve the neutron ambient dose equivalent [H*(10)] response of the ZReC (zirconium-lined portable neutron counter responding(More)