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A BiCMOS embedded RF-MEMS switch module is demonstrated. The module consists of four main blocks: 1) RF-MEMS switch technology, 2) Switch models for design-kit implementation, 3) High Voltage (HV) generation and digital interface, 4) Flexible packaging. The RF-MEMS switch technology is detailed by focusing on the contact model, especially in the down-state.(More)
In this paper we demonstrate the modeling and optimization of BiCMOS embedded high aspect ratio through-silicon vias (TSV) for RF-grounding applications. The inductance and the resistance of the TSV are analyzed with respect to TSV design parameters and process effects such as sidewall-tilting and void formation. RF measurement results with extracted(More)
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