K. W. Park

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In this work, the analysis of thermal, electrical and optical properties of 635 nm InGaAlP resonant-cavity light-emitting diodes is presented. We show that including the electron stop layer in both side of active layer improves the efficiency of such device due to increasing the electron capture efficiency in the quantum wells. Theoretical analysis is(More)
The analysis of electro-optical properties of 635 nm InGaP/InGaAlP resonant-cavity light-emitting diodes (RCLED) with AlGaAs mirrors is presented. We show that including the periodic gain medium with slightly p-doped electron stop layer in both side of active layer improves the efficiency of such device due to increasing the electron capture efficiency in(More)
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