K. V. Khot

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In this paper, we report the effect of write voltage and frequency on memristor based Resistive Random Access Memory (RRAM). The above said parameters have been investigated on the linear drift model of memristor. With a variation of write voltage from 0.2V to 1.2V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz the corresponding(More)
Herein, we report honeycomb nanostructured single crystalline hexagonal WO(3) (h-WO(3)) thin films in order to improve electrochromic performance. In the present investigation, honeycomb nanostructured WO(3) with different unit size and nanowire array with highly nanocrystalline frameworks have been synthesized via a hydrothermal technique. The influence of(More)
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