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The reliability of InGaP/GaAs heterojunction bipolar transistors (HBT's) under high emitter current density stress has been investigated. The current acceleration of transistor lifetime is modeled as a power law relationship. Over a range of 25kA/cm/sup 2/ to 150 kA/cm/sup 2/, we have extracted a square root dependence of lifetime on current density. These(More)
GCS has successfully developed a high performance and manufacturable 4-inch InP HBT technology for commercial pure-play foundry services. In this paper, we demonstrated that with our proprietary device design and process technology, GCS's InP HBTs show potentially excellent reliability under lifetests at current densities of 100kA/cm/sup 2/ or higher. The(More)
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