K. Siegrist

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Photoelectron emission microscopy ~PEEM! has been used to investigate simple device structures buried under ultrathin oxides. In particular, we have imaged Au–SiO2 and p-type Si–SiO2 structures and have demonstrated that PEEM is sensitive to these buried structures. Oxide overlayers ranging up to 15.3 nm were grown by systematically varying the exposure(More)
CW THz spectroscopy has been used to investigate the lowest frequency vibrational modes of a pair of isostructural dipeptide nanotubes. THz spectra were obtained from 2 cm<sup>-1</sup> to 100 cm<sup>-1</sup> at 4.2 K for several different preparations of alanyl valine and valyl alanine, as a means of studying effects of cocrystallized solvent molecules on(More)
We present a model that describes doping-induced contrast in photoelectron emission microscopy by including the effect of surface state distributions and doping-induced band gap reduction. To quantify the contrast, the photoyield from the valence band for near-threshold photoemission is calculated as a function of p-type doping concentration in Si~001!.(More)
A non-destructive technique for obtaining voltage contrast information with photoelectron emission microscopy is described. Samples consisting of electrically isolated metal lines were used to quantify voltage contrast in photoelectron emission microscopy. The voltage contrast behaviour is characterized by comparing measured voltage contrast with calculated(More)
Samples consisting of electrically isolated titanium lines fabricated on a titanium surface were used to quantify voltage-induced contrast effects in photoelectron emission microscopy (PEEM). Induced contrast effects were observed to extend 6 μm for a -5 V bias applied to a 303 nm tall raised line. We therefore explored, via numerical calculation, the(More)
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