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A 32 nm gate-first high-k/metal-gate technology is demonstrated with the strongest performance reported to date to the best of our knowledge. Drive currents of 1340/940 muA/mum (n/p) are achieved at I<sub>off</sub>=100 nA/mum, V<sub>dd</sub>=1 V, 30 nm physical gate length and 130 nm gate pitch. This technology also provides a high-Vt solution for(More)
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