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We report the first demonstration of n-channel field-effect transistors (N-FETs) with in situ phosphorus-doped silicon-carbon (SiCP) stressors incorporated in the source/drain extension (SDE)(More)
Phosphorus <i>in</i> <i>situ</i> doped (Si<sub>1-y</sub>C<sub>y</sub>) films (SiC:P) with substitutional carbon concentration of 1.7% and 2.1% were selectively grown in the source and drain regions(More)
In this paper, we report the first demonstration of n-channel FinFETs with in-situ doped silicon-carbon (Si<sub>1-y</sub>C<sub>y</sub> or SiC:P) source and drain (S/D) stressors. New key features(More)
We report the demonstration of two distinct approaches to reduce parasitic resistances in MuGFETs with silicon-carbon (Si:C) S/D. First, the addition of dysprosium (Dy) in NiSi:C contacts reduces the(More)
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