K. Matsuzawa

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The breakdown characteristics of the gate insulator of nMOSFETs during transmission line pulsing for electrostatic discharge testing is evaluated by using device simulations. Experimental data for the gate bias and gate oxide thickness dependences of the number of pulses to breakdown are reproduced by adopting the anode-hole-injection model. The polarity of(More)
This paper presents a detailed analysis of latch-up characteristics for 90nm RF CMOS on high-resistivity substrate with 400 ohm-cm for the first time. According to our measurement and simulation results, latch-up dependence of PNP base and NPN emitter injection mode on Si substrate resistivity is small. On the other hand, PNP emitter and NPN base injection(More)
Nano-TaOx particles were supported on multi-walled carbon nanotubes via the thermal decomposition of oxy-tantalum phthalocyanine. The phthalocyanine-derived carbon connected TaOx particles with the nanotube-support to provide a conductive path. The oxygen reduction reaction activity, which solely originated from TaOx, was above 0.9 V with larger currents(More)
In order to develop noble-metaland carbon-free cathodes, titanium-niobium oxides were prepared as active materials for oxide-based cathodes and the factors affecting the oxygen reduction reaction (ORR) activity were evaluated. The high concentration sol-gel method was employed to prepare the precursor. Heat treatment in Ar containing 4% H2 at 700–900 °C was(More)
Simulation methods for the flicker noise caused by discretized traps in gate insulators of scaled-down MOSFETs were studied. An analytical approach for statistical calculation and a partial Monte Carlo method for interpreting the effects of the noise sources were implemented in a device simulator. The analytical method successfully reproduced the(More)
The saturation velocity is one of the most important parameters for simulation of deep submicron nMOSFETs. The saturation velocity is modeled as a function of electron concentration by simulating the same structure as measured resistive gate MOSFETs. The saturation velocity lowering under the strong inversion condition is confirmed in single source/drain(More)