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The breakdown characteristics of the gate insulator of nMOSFETs during transmission line pulsing for electrostatic discharge testing is evaluated by using device simulations. Experimental data for the gate bias and gate oxide thickness dependences of the number of pulses to breakdown are reproduced by adopting the anode-hole-injection model. The polarity of(More)
This paper presents a detailed analysis of latch-up characteristics for 90nm RF CMOS on high-resistivity substrate with 400 ohm-cm for the first time. According to our measurement and simulation results, latch-up dependence of PNP base and NPN emitter injection mode on Si substrate resistivity is small. On the other hand, PNP emitter and NPN base injection(More)
Nano-TaOx particles were supported on multi-walled carbon nanotubes via the thermal decomposition of oxy-tantalum phthalocyanine. The phthalocyanine-derived carbon connected TaOx particles with the nanotube-support to provide a conductive path. The oxygen reduction reaction activity, which solely originated from TaOx, was above 0.9 V with larger currents(More)
In order to develop noble-metal-and carbon-free cathodes, titanium-niobium oxides were prepared as active materials for oxide-based cathodes and the factors affecting the oxygen reduction reaction (ORR) activity were evaluated. The high concentration sol-gel method was employed to prepare the precursor. Heat treatment in Ar containing 4% H2 at 700–900 °C(More)
We discuss random dopant effects in ultra-small MOSFETs associated with quantum confinement effects and contact resistances, along with the separation of impurity number fluctuations and position fluctuations. The contribution ratio of the effect of the channel impurity position fluctuation to the total threshold voltage fluctuation almost reaches 75%,(More)
Simulation methods for the flicker noise caused by discretized traps in gate insulators of scaled-down MOSFETs were studied. An analytical approach for statistical calculation and a partial Monte Carlo method for interpreting the effects of the noise sources were implemented in a device simulator. The analytical method successfully reproduced the(More)
Nickel monosilicide (NiSi) is considered to be a promising candidate for the self-aligned silicide (SALICIDE) material of 65 nm node MOSFETs and beyond. Therefore, an accurate simulation method for the NiSi SALICIDE process is required in order to design the optimum device. We realize, for the first time, the integrated simulation with silicide topography(More)