K. Matsuzawa

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The breakdown characteristics of the gate insulator of nMOSFETs during transmission line pulsing for electrostatic discharge testing is evaluated by using device simulations. Experimental data for the gate bias and gate oxide thickness dependences of the number of pulses to breakdown are reproduced by adopting the anode-hole-injection model. The polarity of(More)
This paper presents a detailed analysis of latch-up characteristics for 90nm RF CMOS on high-resistivity substrate with 400 ohm-cm for the first time. According to our measurement and simulation results, latch-up dependence of PNP base and NPN emitter injection mode on Si substrate resistivity is small. On the other hand, PNP emitter and NPN base injection(More)
In order to develop noble-metal-and carbon-free cathodes, titanium-niobium oxides were prepared as active materials for oxide-based cathodes and the factors affecting the oxygen reduction reaction (ORR) activity were evaluated. The high concentration sol-gel method was employed to prepare the precursor. Heat treatment in Ar containing 4% H2 at 700–900 °C(More)
We discuss random dopant effects in ultra-small MOSFETs associated with quantum confinement effects and contact resistances, along with the separation of impurity number fluctuations and position fluctuations. The contribution ratio of the effect of the channel impurity position fluctuation to the total threshold voltage fluctuation almost reaches 75%,(More)
Random-dopant-induced gate tunneling current fluctuations are studied for the first time. It is shown that gate leakage currents considerably fluctuate among MOSFETs even if there is no gate oxide thickness fluctuation. The physical origin of random-dopant-induced gate tunneling current fluctuations near the stand-by (V<inf>g</inf>&#8776; +0 V) is the(More)
Simulation methods for the flicker noise caused by discretized traps in gate insulators of scaled-down MOSFETs were studied. An analytical approach for statistical calculation and a partial Monte Carlo method for interpreting the effects of the noise sources were implemented in a device simulator. The analytical method successfully reproduced the(More)