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Multi-layer simulation is proposed for accurate modeling of stressor film deposition. Multi-layer simulation subdivides a single deposition into a series of deposition and relaxation steps to emulate mechanical quasi-equilibrium during the physical deposition process. Only the multi-layer model is able to simultaneously match the experimental data on drive(More)
Using PMOSFETs with a range of built-in process induced stress and four-point bending characterization, we present evidence that the stress response of PMOSFETs increases with channel stress. A novel method incorporating the characterization data with channel stress simulation has been developed which shows excellent agreement between our prediction and(More)
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