Multi-layer simulation is proposed for accurate modeling of stressor film deposition. Multi-layer simulation subdivides a single deposition into a series of deposition and relaxation steps to emulate mechanical quasi-equilibrium during the physical deposition process. Only the multi-layer model is able to simultaneously match the experimental data on drive… (More)
redistribution of point defects in silicon device structures, " Proc. of the 9th Internat. The effect of intrinsic point defects upon dislocation motion in silicon, " Proc. of the 9th Internat. Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts, " Appl.
Using PMOSFETs with a range of built-in process induced stress and four-point bending characterization, we present evidence that the stress response of PMOSFETs increases with channel stress. A novel method incorporating the characterization data with channel stress simulation has been developed which shows excellent agreement between our prediction and… (More)