K. L. Litvinenko

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The low-temperature (∼5 K) phonon-assisted relaxation of the 2p 0 state of phosphorus donors in isotopically pure, monocrystalline 28 Si has been studied in the time domain using a pump-probe technique. The lifetime of the 2p 0 state in 28 Si:P is found to be 235 ps, which is 16% larger than the lifetime of a reference Si:P sample with a natural isotope(More)
We investigate the effect of silicon ion irradiation on free carrier lifetime in silicon waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from(More)
Articles you may be interested in Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors Increasing the operating temperature of boron doped silicon terahertz(More)
Shallow donors in silicon are favorable candidates for the implementation of solid-state quantum computer architectures because of the promising combination of atomiclike coherence properties and scalability from the semiconductor manufacturing industry. Quantum processing schemes require (among other things) controlled information transfer for readout.(More)
Electron spin relaxation times have been measured in InSb and InAs epilayers in a moderate ͑Ͻ4 T͒ external magnetic field. A strong and opposite field dependence of the spin lifetime was observed for longitudinal ͑Faraday͒ and transverse ͑Voigt͒ configuration. In the Faraday configuration the spin lifetime increases because the D'yakonov–Perel' dephasing(More)
We measure transverse magnetically focused photocurrent signals in an InSb/InAlSb quantum well device. Using optical spin orientation by modulated circularly polarized light an electron spin dependent signal is observed due to the spin-orbit interaction. Simulations of the focusing signal are performed using a classical billiard ball model which includes(More)
The push for a semiconductor-based quantum information technology has renewed interest in the spin states and optical transitions of shallow donors in silicon, including the donor bound exciton transitions in the near-infrared and the Rydberg, or hydrogenic, transitions in the mid-infrared. The deepest group V donor in silicon, bismuth, has a large(More)
The ability to control dynamics of quantum states by optical interference, and subsequent electrical read-out, is crucial for solid state quantum technologies. Ramsey interference has been successfully observed for spins in silicon and nitrogen vacancy centres in diamond, and for orbital motion in InAs quantum dots. Here we demonstrate terahertz optical(More)
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