K. L. Litvinenko

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Laboratory spectroscopy of atomic hydrogen in a magnetic flux density of 10(5) T (1 gigagauss), the maximum observed on high-field magnetic white dwarfs, is impossible because practically available fields are about a thousand times less. In this regime, the cyclotron and binding energies become equal. Here we demonstrate Lyman series spectra for phosphorus(More)
We have used time resolved spectroscopy to measure the relaxation of spin polarization in InSb/AlInSb quantum wells (QWs) as a function of temperature and mobility. The results are consistent with the D’yakonov–Perel (DP) mechanism for high mobility samples over the temperature range from 50 to 300 K. For low mobility samples at high temperature the(More)
H.-W. Hübers,1,2,* S. G. Pavlov,1 S. A. Lynch,3 Th. Greenland,4 K. L. Litvinenko,5 B. Murdin,5 B. Redlich,6 A. F. G. van der Meer,6 H. Riemann,7 N. V. Abrosimov,7 P. Becker,8 H.-J. Pohl,9 R. Kh. Zhukavin,10 and V. N. Shastin10 1Institute of Planetary Research, German Aerospace Center (DLR), Rutherfordstrasse 2, 12489 Berlin, Germany 2Institut für Optik und(More)
Articles you may be interested in Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors Increasing the operating temperature of boron doped silicon terahertz(More)
K. L. Litvinenko,1,* S. G. Pavlov,2 H.-W. Hübers,2,3 N. V. Abrosimov,4 C. R. Pidgeon,5 and B. N. Murdin1 1Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United Kingdom 2Institute of Planetary Research, German Aerospace Center (DLR), Ruthefordstraße 2, 12489 Berlin, Germany 3Technische Universität Berlin, Institut für Optik und(More)
We report the optical measurement of the spin dynamics at elevated temperatures and in zero magnetic field for two types of degenerately doped n-InSb quantum wells (QWs), one asymmetric (sample A) and one symmetric (sample B) with regards to the electrostatic potential across the QW. Making use of three directly determined experimental parameters: the spin(More)
magnetic field for InSb and InAs K. L. Litvinenko, M. A. Leontiadou, Juerong Li, S. K. Clowes, M. T. Emeny, T. Ashley, C. R. Pidgeon, L. F. Cohen, and B. N. Murdin Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United Kingdom QinetiQ Ltd., St. Andrews Road, Malvern WR14 3PS, United Kingdom Department of Physics, Heriot-Watt(More)
The push for a semiconductor-based quantum information technology has renewed interest in the spin states and optical transitions of shallow donors in silicon, including the donor bound exciton transitions in the near-infrared and the Rydberg, or hydrogenic, transitions in the mid-infrared. The deepest group V donor in silicon, bismuth, has a large(More)
The ability to control dynamics of quantum states by optical interference, and subsequent electrical read-out, is crucial for solid state quantum technologies. Ramsey interference has been successfully observed for spins in silicon and nitrogen vacancy centres in diamond, and for orbital motion in InAs quantum dots. Here we demonstrate terahertz optical(More)
The spin relaxation in undoped InSb films grown on GaAs has been investigated in the temperature range from 77 to 290 K. Two distinct lifetime values have been extracted, 1 and 2.5 ps, dependent on film thickness. Comparison of this data with a multilayer transport analysis of the films suggests that the longer time 2.5 ps at 290 K is associated with the(More)