K. Kakusima

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This work reports a new model parameter extraction scheme for multi-finger MOS transistors operated in the radio-frequency (RF) range. The drain parasitic inductance, intrinsic capacitance, channel resistance, gate resistance, drain resistance, and source resistance are determined from the scattering parameters measured on RFMOS transistors with channel(More)
This work studies the effects of number of gate finger on the DC subthreshold characteristics of multifinger nanoscale MOS transistors. We found in not optimally-tempered nanoscale (gate length = 90 nm) MOS transistors that the significantly deteriorated subthreshold characteristics can be effectively improved by increasing the number of gate finger. This(More)
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