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SUMMARY This paper presents a new technique for mod-eling High-Voltage lightly-doped-drain MOS (HV MOS) devices accurately with the BSIM3v3 SPICE model. Standard SPICE models do not model the voltage dependency of R s and R d in HV MOS devices; this causes large discrepancies between the simulated and measured I-V characteristics of HV MOS devices. We(More)
SUMMARY This paper presents a new technique for accurately modeling uni-directional High-Voltage lightly-doped-drain MOS (HV MOS) devices by extending the bi-directional HV MOS model and adopting a new parameter extraction method. We have already reported on a SPICE model for bi-directional HV MOS devices based on BSIM3v3. However, if we apply this(More)
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